• DocumentCode
    2977772
  • Title

    Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver

  • Author

    Luniewski, Piotr ; Jansen, Uwe

  • Author_Institution
    Infineon Technol. AG, Applic. Eng., Warstein
  • fYear
    2008
  • fDate
    1-3 Sept. 2008
  • Firstpage
    88
  • Lastpage
    96
  • Abstract
    The performance of the new IGBT4 chip technology in PrimePACKtrade high power module housing is presented here together with the coreless transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15 V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.
  • Keywords
    driver circuits; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; power transformers; PrimePACK; coreless transformer technology driver IC; dynamic module behaviour; high-power IGBT chip module; unsymmetrical gate voltage drive; voltage -7 V to 15 V; voltage 1200 V; Electromagnetic interference; Insulated gate bipolar transistors; Inverters; Multichip modules; Power engineering and energy; Power generation; Silicon; Temperature; Transformer cores; Voltage; High voltage IC’s; IGBT; Power semiconductor device; Thermal design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
  • Conference_Location
    Poznan
  • Print_ISBN
    978-1-4244-1741-4
  • Electronic_ISBN
    978-1-4244-1742-1
  • Type

    conf

  • DOI
    10.1109/EPEPEMC.2008.4635249
  • Filename
    4635249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2977772