DocumentCode
2977872
Title
Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thickness
Author
Chuang, K.Y. ; Chen, C.Y. ; Tzeng, T.E. ; Feng, David J. ; Lay, T.S. ; Chang, T.Y.
Author_Institution
Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2007
fDate
14-18 May 2007
Firstpage
190
Lastpage
193
Abstract
Triple-layer InGaAs QDs of different spacer layer thickness are characterized by polarized electroluminescence and photocurrent spectroscopy. The results show that the decease of spacer layer thickness increases the TE/TM insensitivity.
Keywords
adsorption; electroluminescence; gallium arsenide; indium compounds; quantum dot lasers; InGaAs; absorption polarization; electroluminescence; multiple quantum dots layer; photocurrent spectroscopy; Absorption; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Optical polarization; Photoconductivity; Quantum dots; Stationary state; Tellurium; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381154
Filename
4265911
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