Title :
Conduction mechanisms of P3HT: PCBM solar cell
Author :
Nolasco, Jairo C. ; Cabré, R. ; Marsal, L.F. ; Pacios, Roberto ; Waldauf, Christoph ; Neophytou, Marios ; Palomares, Emilio ; Pallares, J.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Rovira i Virgili, Tarragona
Abstract :
In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current-voltage-temperature measurements.
Keywords :
aluminium; indium compounds; p-n junctions; polymers; solar cells; space charge; ITO-Al; ITO-PEDOT:PSS-P3HT:PCBM-Al solar cells; conduction mechanisms; dark current-voltage measurements; multitunneling capture emission process; p-n junctions; poly-(ethylene dioxythiophene); poly-(hexyl thiophene): [6,6]-phenyl C61 butyric acid methyl ester); poly-(styrene sulphonic acid); space-charge limited process; voltage 0.2 V to 0.6 V; Current measurement; Current-voltage characteristics; Electric resistance; Electric variables; Electric variables measurement; Equivalent circuits; Indium tin oxide; Photovoltaic cells; Temperature measurement; Voltage;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800517
