Title :
Effective Carrier Mobility Extraction Based on RF Modeling for Highly Leaky MOSFET Devices with Short Channel Length and Small Area
Author :
Choi, G.B. ; Hong, S.H. ; Choi, H.S. ; Baek, R.H. ; Lee, K.T. ; Park, M.S. ; Song, S.H. ; Kim, J.C. ; Sagong, H.C. ; Takeuchi, H. ; Lee, B.H. ; Kang, C.Y. ; Jeong, Y.H.
Author_Institution :
Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
Abstract :
In this paper, a novel method for effective mobility extraction of the advanced MOSFET devices using RF modeling scheme is proposed. The proposed method is robust to high gate leakage current and parasitic source/drain resistance. Also, this method can substantially reduce error from drain bias mismatch between channel conductance and gate-to-channel capacitance measurement, uses only single device, and is applicable to small-area devices. nMOSFET with HfSiON gate dielectric and TiN gate electrode is demonstrated with the proposed method.
Keywords :
MOSFET; carrier mobility; hafnium compounds; leakage currents; RF modeling; channel conductance; drain bias mismatch; effective carrier mobility extraction; gate-to-channel capacitance; highly leaky MOSFET devices; parasitic source/drain resistance; short channel length; Area measurement; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Electron devices; Leakage current; MOSFET circuits; Radio frequency; USA Councils;
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
DOI :
10.1109/SCED.2009.4800530