Practical high efficiency bifacial solar cells

Author

Moehlecke, A. ; Zanesco, I. ; Luque, A.

Author_Institution

Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1663

Abstract

In this paper, we present a practical process to obtain bifacial Si solar cells. These cells are made using p⁺nn⁺ structure on high-medium base resistivity, continuous emitters and with a process that maintains high bulk minority carrier lifetime. Efficiencies of 19.1% and 18.1% are achieved under standard conditions when the cell is illuminated by n⁺n high-low junction and when it is illuminated by p⁺n junction, respectively. We show that the n⁺n high-low junction provides a higher current density and a good ratio between generated current of each face is found to be of about 103%

Keywords

carrier lifetime; elemental semiconductors; minority carriers; p-n junctions; semiconductor materials; silicon; solar cells; 18.1 percent; 19.1 percent; Si; bifacial Si solar cells; continuous emitters; high bulk minority carrier lifetime; high efficiency; high-medium base resistivity; n⁺n high-low junction; p⁺n junction; p⁺nn⁺ structure; Boron; Charge carrier lifetime; Conductivity; Current density; Lighting; Photovoltaic cells; Silicon; Solar energy; Solar power generation; Telecommunication standards;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520538

Filename

520538