DocumentCode :
2978524
Title :
Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs
Author :
Calvo-Gallego, Jaime ; Fobelets, Kristel ; Perez, J. E Velazquez
Author_Institution :
Dept. de Inf. y Autom., Univ. de Salamanca, Zamora
fYear :
2009
fDate :
11-13 Feb. 2009
Firstpage :
479
Lastpage :
482
Abstract :
A theoretical study of both buried and surface strained n-channel Si/SiGe MOSFETs is presented. The analysis focused on the possible benefits of the scaling on the AC and noise performance of the transistor for low-power applications using a 2D hydrodynamic model. The impedance field method was adopted to self-consistently obtain the current noise at the device´s terminals. The minimum noise figure (NFmin) dependence with the drain current was explained in terms of carrier transport in the channel. It was found that a pure reduction of the transistor´s gate length can be detrimental for subthreshold operation, but would lead to lower values of NFmin for medium and high current levels. Buried channel devices consistently showed higher values of the subthreshold slope and NFmin than the surface channel ones.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor junctions; silicon; thermal noise; 2D hydrodynamic model; RF noise; buried n-channel MOSFET; current noise; impedance field method; noise figure; pseudomorphic MOSFET; subthreshold slope; surface strained n-channel MOSFET; transistor; FETs; Germanium silicon alloys; Hydrodynamics; MOSFETs; Noise figure; Performance analysis; Radio frequency; Semiconductor device modeling; Semiconductor device noise; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location :
Santiago de Compostela
Print_ISBN :
978-1-4244-2838-0
Electronic_ISBN :
978-1-4244-2839-7
Type :
conf
DOI :
10.1109/SCED.2009.4800538
Filename :
4800538
Link To Document :
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