GaInNAs Electroabsorption Modulated Laser

Author

Koyama, Kenji ; Hashimoto, Jun-ichi ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Yamada, Takashi ; Fukuda, Chie ; Onishi, Yutaka ; Fujii, Kousuke ; Katsuyama, Tsukuru

Author_Institution

Sumitomo Electr. Ind. Ltd., Yokohama

fYear

2007

fDate

14-18 May 2007

Firstpage

365

Lastpage

368

Abstract

We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; EML; GaInNAs; MQW; SMSR; bit rate 2.5 Gbit/s; butt-joint regrowth technique; electroabsorption modulated laser; multiple quantum well active layer; side-mode suppression ratio; single longitudinal mode operation; temperature 25 C to 100 C; uncooled operation; Chirp modulation; Coatings; Costs; Distributed feedback devices; Electrons; Extinction ratio; Gallium arsenide; Laser modes; Optical materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381199

Filename

4265956