Mysterious Material InN in Nitride Semiconductors - What´s the Bandgap Energy and its Application?

Author

Matsuoka, Takashi ; Nakao, Masashi

Author_Institution

Tohoku Univ., Sendai

fYear

2007

fDate

14-18 May 2007

Firstpage

372

Lastpage

375

Abstract

The progress in nitride semiconductors is reviewed. The current status in the growth and characteristics of InN, which remains the most mysterious compound, is reviewed. The phase diagram for InN growth, the optical absorption characteristic, polarity, temperature dependence of photoluminescence, future prospects are described. The application of InN for light emitting devices is discussed.

Keywords

III-V semiconductors; indium compounds; infrared spectra; light emitting diodes; optical materials; phase diagrams; photoluminescence; photonic band gap; semiconductor growth; ultraviolet spectra; visible spectra; wide band gap semiconductors; InN - Interface; light emitting devices; nitride semiconductors; optical absorption characteristics; phase diagram; photoluminescence; semiconductor growth; wide bandgap semiconductors; Crystallization; Epitaxial growth; Gallium nitride; Indium phosphide; Optical buffering; Optical device fabrication; Optical films; Optical materials; Photonic band gap; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381201

Filename

4265958