MOVPE-Grown InAs/InGaAs Multiple-Quantum-Well Lasers Emitting at 2.33 μm

Author

Sato, Tomonari ; Mitsuhara, Manabu ; Kakitsuka, Takaaki ; Kondo, Yasuhiro

Author_Institution

NTT Corp., Kanagawa

fYear

2007

fDate

14-18 May 2007

Firstpage

380

Lastpage

383

Abstract

We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μm by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm² and the output power was above 12 mW.

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; laser beams; laser stability; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; thermal stability; vapour phase epitaxial growth; InAs-InGaAs - Interface; MOVPE-grown multiple-quantum-well lasers; PL peak; metalorganic vapor phase epitaxy; thermal stability; threshold current density; wavelength 2.33 μm; Capacitive sensors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum well devices; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0874-1

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381203

Filename

4265960