DocumentCode
2979337
Title
Si-implanted GaAs Metal-semiconductor Field-effect Transistors With InGap Surface Passivation Film
Author
Hyuga, Fumiaki ; Aoki, Tatsuo ; Asai, Kazuyoshi ; Imamura, Yoshihiro
Author_Institution
NTT LSI Laboratories and NTT Opto-Electronics Laboratories
fYear
1992
fDate
21-24 June 1992
Keywords
FETs; Gallium arsenide; Integrated circuit measurements; Laboratories; MESFETs; Passivation; Photonic band gap; Schottky barriers; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671867
Filename
671867
Link To Document