DocumentCode
2979642
Title
Surface Roughness Measurements on Semiconductors Using White Light Interferometry
Author
Blunt, Roy
Author_Institution
IQE Eur. Ltd., Cardiff
fYear
2007
fDate
14-18 May 2007
Firstpage
582
Lastpage
585
Abstract
The use of white light interferometry to directly measure surface roughness on a variety of substrates and epitaxially grown materials is described. This method has many advantages for process development and monitoring compared to competing technologies as it offers the ability to rapidly image surfaces and to produce quantitative values for roughness without contacting the surface or damaging it any way.
Keywords
light interferometry; nondestructive testing; process monitoring; semiconductor epitaxial layers; substrates; surface roughness; surface topography measurement; epitaxially grown materials; process monitoring; semiconductor surface; substrates; surface roughness measurements; white light interferometry; Area measurement; Atomic force microscopy; Indium phosphide; Optical interferometry; Pollution measurement; Rough surfaces; Semiconductor materials; Substrates; Surface contamination; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381256
Filename
4266013
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