DocumentCode :
2979642
Title :
Surface Roughness Measurements on Semiconductors Using White Light Interferometry
Author :
Blunt, Roy
Author_Institution :
IQE Eur. Ltd., Cardiff
fYear :
2007
fDate :
14-18 May 2007
Firstpage :
582
Lastpage :
585
Abstract :
The use of white light interferometry to directly measure surface roughness on a variety of substrates and epitaxially grown materials is described. This method has many advantages for process development and monitoring compared to competing technologies as it offers the ability to rapidly image surfaces and to produce quantitative values for roughness without contacting the surface or damaging it any way.
Keywords :
light interferometry; nondestructive testing; process monitoring; semiconductor epitaxial layers; substrates; surface roughness; surface topography measurement; epitaxially grown materials; process monitoring; semiconductor surface; substrates; surface roughness measurements; white light interferometry; Area measurement; Atomic force microscopy; Indium phosphide; Optical interferometry; Pollution measurement; Rough surfaces; Semiconductor materials; Substrates; Surface contamination; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location :
Matsue
ISSN :
1092-8669
Print_ISBN :
1-4244-0875-X
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2007.381256
Filename :
4266013
Link To Document :
بازگشت