Title :
Embedded power technology for IPEMs packaging applications
Author :
Liang, Zhenxian ; Lee, Fred C.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Embedded power is a hybrid MCM-based 3-D integration packaging technology developed for integrated power electronics module application. Inside of the module the multiple bare power chip´s IGBTs or MOSFETs are buried in a ceramic frame and covered by dielectric with via holes on the Al pads of the chips. Then a deposited metallization interconnects the power devices and other electronics circuitry. Dielectric isolation pattern is fabricated using screen-printing approach. Multilayer metallization is deposited by sputtering and electroplating technologies. Two IPEMs have been fabricated to demonstrate the feasibility of this power electronics integration technology. Details of design and processing, as well as experiment results are presented
Keywords :
MOSFET; electroplating; insulated gate bipolar transistors; interconnections; metallisation; multichip modules; sputtering; Al pads; IGBT; MOSFET; ceramic frame; deposited metallization; dielectric; dielectric isolation pattern; electroplating technologies; embedded power technology; holes; hybrid MCM-based 3-D integration packaging technology; integrated power electronics module application; multilayer metallization; power devices interconnection; power electronics integration technology; screen-printing approach; sputtering technologies; Ceramics; Dielectrics; Electronics packaging; Insulated gate bipolar transistors; Integrated circuit interconnections; Isolation technology; MOSFETs; Metallization; Nonhomogeneous media; Power electronics;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
DOI :
10.1109/APEC.2001.912497
