Modeling of Hot Carrier induced substrate current and degradation in triple gate bulk FinFETs

In this paper, the Hot Carrier Injection (HCI) characteristic for a triple gate bulk FinFET is investigated through modeling the HCI generated substrate current, electric field distribution and the maximum electric field near the drain region. Then an analytical model for HCI induced trap generation and degradation in this structure is presented. The model is obtained by solving the Reaction-Diffusion equations multi-dimensionally. The geometry dependence of the time-exponent of HCI degradation in this structure is modeled in the framework. The accuracy of the models is verified using experimental results.