A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors

Conventional velocity saturation model does not explain why mobility enhancement through stress engineering can improve the on-current of sub-0.1 μm metal-oxide-semiconductor (MOS) transistors. Hence, quasi-ballistic transport model is often used to address this problem. We found that the conventional velocity saturation model seems to be able to describe the experimental data of the saturated drain current (I_ds) vs. gate voltage (V_GS) relationship of sub-0.1 μm MOS transistors when the VGS is significantly larger than the threshold voltage and approaches the power supply voltage V_DD.