Title :
Experimental demonstration of the forward biased safe operation area of the emitter turn-off thyristor
Author :
Xu, Zhenxue ; Bai, Yuming ; Li, Yuxin ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The emitter turn-off (ETO) thyristor is a new type of MOS-controlled thyristor that has a wide reverse-biased safe operation area (RBSOA) due to its unity-gain turn-off capability. Because of the negative feedback provided by the emitter MOSFET, the ETO also has current saturation capability. The forward biased safe operation area (FBSOA) of a small ETO is experimentally demonstrated. The results show that the small ETO has excellent current saturation capability that can be used to control the turn-on di/dt. Issues related to realizing a large area ETO´s FBSOA are discussed
Keywords :
MOS-controlled thyristors; MOSFET; feedback; MOS-controlled thyristor; current saturation; current saturation capability; emitter MOSFET; emitter turn-off thyristor; forward biased safe operation area; negative feedback; turn-on di/dt control; unity-gain turn-off capability; wide reverse-biased safe operation area; Anodes; Cathodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Negative feedback; Power electronics; Switches; Threshold voltage; Thyristors;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
DOI :
10.1109/APEC.2001.912521
