Photoluminescence of Silicon Nitride-Embedded Silicon Nanocrystallites Prepared by Thermal Annealing of Si-Rich Silicon Nitride

Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. Chemical composition and bonding structures of the SRN were explored using X-ray photoelectron spectroscopy (XPS). Raman spectroscopy and photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. We found that the intensities and the energy locations of the SRN films depend strongly on both the deposition and annealing conditions. High-temperature (~ 900 degC) annealing of as-deposited SRN gives rise to a strong PL because of the formation of denser crystalline Si phases as a result of phase separation of the SRN films.