Title :
The Effect of Input Resistance on Variations of Small Signal Parameters of a Distributed MESFET Transistor
Author :
Hashemi, Amir ; Ghafourifard, Hassan
Author_Institution :
Amirkabir Univ. of Technol., Tehran
Abstract :
When a transistor operates in dc mode, the resistance of each contact causes voltage drops along the contact. Therefore, different points on the contacts will have different voltages. So in distributing the transistor in to slices, here called subtransistors, each slice will have different drain-source and gate-source voltages and consequently different small signal parameters from the others. Also the input resistance of the lumped transistor will alter the variations of the contact voltages. This paper presents the effects of input resistance and contact resistances of a MESFET transistor on small signal parameters of the distributed subtransistors.
Keywords :
MESFET circuits; transistors; MESFET transistor; drain-source voltage; gate-source voltage; signal parameters; subtransistors; Contact resistance; Distributed control; Electric resistance; Finite difference methods; Hydrodynamics; MESFETs; Microwave transistors; Roentgenium; Time domain analysis; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450105
