Title :
Analysis of an EEHEMT Model for InP pHEMTs
Author :
Chang, Y.H. ; Chang, J.J.
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Douliou
Abstract :
This paper summarizes the procedure of extracting the parameters of the agilent EEHEMT model for InP pHEMTs without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters, and established an effective extraction procedure. For AC parameters, we studied the effects of AC parameters on S-parameters characteristics, and optimized these parameters using ADS. The simulation results were compared with the measured characteristics and the model accuracy had been confirmed.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device models; AC parameters; DC parameters; EEHEMT model; S-parameters characteristics; pHEMT; Circuit simulation; Data mining; Equations; Frequency; Indium phosphide; Microwave devices; PHEMTs; Scattering parameters; Transconductance; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450106
