DocumentCode :
2981087
Title :
A Simulation Study of Oxide Thickness Effect on the Performance of SiGe HBTs with SOI Structure
Author :
Liao, S.H. ; Wang, W.C. ; Chang, S.T. ; Lin, C.Y.
Author_Institution :
Nat. Chung Hsing Univ., Taichung
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
271
Lastpage :
274
Abstract :
Using a TCAD simulator, we examine the oxide thickness effect on electrical characteristics of the SiGe HBT on SOI substrates. We have investigated this effect on Early voltage, cut-off frequency, and maximum oscillation frequency for SiGe HBT on SOI substrate. It is found that the maximum oscillation frequency (fmax) of SiGe HBT on SOI substrate is much better than that of conventional SiGe HBT. The maximum oscillation frequency increases with the increase in oxide thickness and tend to saturate at oxide thickness of 0.15 mum. In order to study oxide thickness on self-heating effect, thermal resistances are also simulated.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; silicon-on-insulator; technology CAD (electronics); SOI substrate; SiGe; SiGe HBT; TCAD simulator; cut-off frequency; early voltage; maximum oscillation frequency; oxide thickness effect; thermal resistance; Circuit simulation; Computational modeling; Cutoff frequency; Doping; Electric variables; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450114
Filename :
4450114
Link To Document :
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