Title :
Strained Si surface channel MOSFETs for high-performance CMOS technology
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Biaxial tension enhances in-plane transport of both electrons and holes in silicon, and can improve the current drive of CMOS devices independent of geometric scaling and electrostatic design. Device performance enhancements and issues to be addressed before the realization of strained Si CMOS technology are discussed.
Keywords :
CMOS integrated circuits; MOSFET; electron mobility; elemental semiconductors; hole mobility; silicon; CMOSFET; Si; Si surface channel MOSFETs; biaxial tension; current drive; device performance enhancements; high-performance CMOS technology; in-plane transport enhancement; strained Si CMOS technology; strained Si surface channel; CMOS technology; Charge carrier processes; Electron mobility; Germanium silicon alloys; High definition video; MOSFET circuits; Predictive models; Silicon germanium; Strain control; Thermal conductivity;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912567
