Title :
Impact Ionization in Semiconducting Single Wall Carbon Nanotubes
Author :
Liao, Albert ; Pop, Eric
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL
Abstract :
We have experimentally observed and modeled a second-order transport mechanism near breakdown in large-diameter (small-gap) semiconducting SWNTs. We determine impact ionization to be the primary cause of the up-kick in current. Subsequent simulations taking impact ionization into account provide a theoretical match to our experimentally observed current tail.
Keywords :
carbon nanotubes; elemental semiconductors; impact ionisation; semiconductor devices; semiconductor nanotubes; C; impact ionization; second order transport mechanism; semiconducting single wall carbon nanotubes; Carbon nanotubes; Electric breakdown; Impact ionization; Nanotechnology; Nanotube devices; Semiconductivity; Semiconductor device breakdown; Semiconductor nanotubes; Tail; Tunneling;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800716
