Title :
Abnormal leakage suppression (ALS) scheme for low standby current SRAMs
Author :
Kanda, K. ; Nguyen Duc Mihn ; Kawaguchi, H. ; Sakurai, T.
Author_Institution :
Tokyo Univ., Japan
Abstract :
Abnormal leakage suppression (ALS) repairs standby current errors in SRAMs. By introducing leakage sensors, shift registers and fuses, ACS senses 1 /spl mu/A abnormal leakage, isolates the memory cell from VDD lines and thus suppresses abnormal leakage current. A 64 Kb test SRAM demonstrates effectiveness. Area overhead is 7%.
Keywords :
SRAM chips; cellular arrays; electric fuses; leakage currents; shift registers; 64 Kbit; SRAMs; abnormal leakage suppression; area overhead; fuses; leakage sensors; memory cell; shift registers; standby current errors; Batteries; Circuit testing; Fuses; Leakage current; MOSFETs; Random access memory; Redundancy; Sensor fusion; Shift registers; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912592
