Title :
Theory of Multi-tube Carbon Nanotube Transistors for High Speed Variation-Tolerant Circuits
Author :
Raychowdhury, Arijit ; Kurtin, Juanita ; Borkar, Shekhar ; De, Vivek ; Roy, Kaushik ; Keshavarzi, Ali
Author_Institution :
Circuit Res. Labs., Intel Corp., Hillsboro, OR
Abstract :
In this paper, a multi-tube transistor (MTx) structure is proposed to reduce the burden of technology development for fabricating perfectly ordered array of nanotubes. The proposed MTx architecture accounts for variations and non-idealities that occur in CNFETs. MTx with short transistor channel length operates differently from the long channel CNT-based TFTs where the carriers hop from tube to tube in a percolation network.
Keywords :
carbon nanotubes; field effect transistors; nanoelectronics; nanofabrication; nanotube devices; CNFET; MTx architecture; high speed variation-tolerant circuits; long channel CNT-based TFT; multitube carbon nanotube transistor; percolation network; perfectly ordered nanotube array fabrication; short transistor channel length; Carbon nanotubes; Circuits; Current measurement; Degradation; Doping; Electrostatics; Inorganic materials; Organic materials; Semiconductivity; Silicon;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800719
