DocumentCode :
2982250
Title :
High Performance Long-and Short-Channel In0.7Ga0.3As-channel MOSFETs
Author :
Sun, Yanning ; Kiewra, E.W. ; de Souza, J.P. ; Bucchignano, J.J. ; Fogel, K.E. ; Sadana, D.K. ; Shahidi, G.G.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
41
Lastpage :
42
Abstract :
In conclusion, we have demonstrated long and short-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation. Devices with alpha-Si show much higher transonductance and effective peak mobility of 3810 cm2/Vs. These results indicates that the alpha-Si layer has successfully passivated the III-V surface. Short-channel MOSFETs with gate length of 160 nm display record current of 825 mA/mm and peak transconductance of 683 mS/mm. These results are promising for realizing InGaAs-channel MOSFETs suitable for VLSI applications.
Keywords :
III-V semiconductors; MOSFET; VLSI; gallium arsenide; indium compounds; In0.7Ga0.3As; VLSI applications; effective peak mobility; high performance long-and short-channel; short-channel MOSFET; transonductance; Displays; Electron mobility; Gate leakage; HEMTs; Indium gallium arsenide; Lithography; MODFETs; MOSFETs; Passivation; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800727
Filename :
4800727
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982250
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