Title :
Low Temperature Polycrystalline Silicon TFTs on Polyimide and Glass Substrates
Author :
Yang, Po-Chuan ; Chang, Hsu-Yu ; Yang, Chieh-Hung ; Hsueh, Chun-Yuan ; Lin, Hui-Wen ; Chang, Chi-Yang ; Lee, Si-Chen
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
This paper presents results on low temperature poly-silicon thin film transistors (TFTs) prepared by KrF excimer laser annealing of hydrogenated amorphous silicon (a-Si:H) on polyimide and glass substrate. Two step laser annealing is used in dehydrogenation and crystallization of the a-Si:H into poly-Si on polyimide substrate. From the Raman spectrum, it is found that the crystallinity of the poly-Si on the polyimide substrate is better than that on the glass. The fabricated poly-Si TFT on polyimide shows a very good performance with field effect mobility of 370 cm2/V-sec and on/off current ratio > 106.
Keywords :
laser beam annealing; silicon; thin film transistors; KrF excimer laser annealing; Raman spectrum; TFT; field effect mobility; glass substrates; polycrystalline silicon; polyimide; thin film transistors; Active matrix liquid crystal displays; Annealing; Crystallization; Glass; Laser ablation; Polyimides; Silicon; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450176
