DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs

Author

Bedell, S.W. ; Majumdar, A. ; Jenkins, K.A. ; Ott, J.A. ; Arnold, J. ; Fogel, K. ; Koester, S.J. ; Sadana, D.K.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY

fYear

2008

fDate

23-25 June 2008

Firstpage

45

Lastpage

46

Abstract

In this paper, the fabrication and characterization of strained Ge-on-insulator transistors with gate lengths down to 65 nm is described and also, for the first time, RF characteristics of sub-100-nm gate-length Ge MOSFET are reported. It is concluded that considerable further improvement is possible in both the performance and the short-channel characteristics by increasing the strain in the channel, and by the use of halo implants.

Keywords

Ge-Si alloys; MOCVD; MOSFET; elemental semiconductors; germanium; silicon-on-insulator; Ge; MOCVD; MOSFET DC characterization; MOSFET RF characterization; SGOI gate length; SiGe-Ge; halo implant; metal organic chemical vapor deposition; size 100 nm; size 65 nm; strained Ge-on-insulator p-MOSFET fabrication; Annealing; Capacitance; Capacitance-voltage characteristics; Capacitive sensors; Etching; Fabrication; Implants; MOSFET circuits; Radio frequency; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800729

Filename

4800729