Title :
A 22 mW Bluetooth RF transceiver with direct RF modulation and on-chip IF filtering
Author :
Filiol, N. ; Birkett, N. ; Cherry, J. ; Balteanu, F. ; Gojocaru, C. ; Namdar, A. ; Pamir, T. ; Sheikh, K. ; Glandon, G. ; Payer, D. ; Swaminathan, A. ; Forbes, R. ; Riley, T. ; Alinoor, S.M. ; MacRobbie, E. ; Cloutier, M. ; Pipilos, S. ; Varelas, T.
Author_Institution :
Conexant Syst. Inc., Ottawa, Ont., Canada
Abstract :
A +2 dBm Bluetooth transceiver in 0.5 /spl mu/m SiGe BiCMOS consumes 22 mW at 2 V. The transmitter uses a /spl Delta//spl Sigma/ synthesizer and on-chip VCO to directly modulate the carrier and settles to 30 ppm within 180 /spl mu/s. The single low-IF I/O receiver uses a 7th-order complex IF filter with tuning, distributed AGC and digital PLL demodulation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; transceivers; 0.5 micron; 2 V; 22 mW; Bluetooth RF transceiver; SiGe BiCMOS IC; delta-sigma synthesizer; digital PLL demodulation; direct RF modulation; distributed AGC; on-chip VCO; tunable IF filter; BiCMOS integrated circuits; Bluetooth; Delta modulation; Germanium silicon alloys; Radio frequency; Silicon germanium; Synthesizers; Transceivers; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912604
