Study of hydrogen gettering effects in plasma immersion ion implantation doping experiments

Summary form only given, as follows. The gettering of some common impurities such as Fe, Cu, Al and Na in silicon wafers from low energy and high dose hydrogen ion implantation was studied. It is found that PIII is an effective and economic technique to integrate the gettering and doping processes and a very clean layer in the silicon wafers could be formed. Because hydrogen ions dominate in the hydride dopant plasma and H/sub 2/ is usually used in PIII doping experiments as a dilution gas, low energy and high dose H-implantation introduces more effective gettering of the common impurities in Si. Si wafers were first implanted using plasma immersion ion implantation (PIII) technique. Hydrogen and the damaged layers were then annealed to drive the hydrogen out to leave a band of cavities close to the original project range. The profiles of the common impurities as well as implanted hydrogen were evaluated using secondary ion mass spectrometry. To optimize the implantation and annealing conditions for the most effective gettering, suitable processing conditions were determined after investigating the influence on the gettering effect of changing implantation energy, dose, annealing temperature and annealing time, respectively.