Title :
Size Dependent Thermal Activation Study of Single InSb Nanowire Devices for High Speed and Low Power Digital Logic Applications
Author :
Khan, M. Ibrahim ; Penchev, Miroslav ; Lake, Roger ; Ozkan, Mehmed ; Ozkan, Mihrimah
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Riverside, CA
Abstract :
InSb nanowire devices at different diameter range from 30 nm-200 nm using electrochemical deposition technique is demonstrated. Electrical properties of nanowires is investigated at different diameters for beyond CMOS applications with high speed and low power characteristics. In particular, InSb nanowire based FET devices is fabricated on Si substrate and presented.
Keywords :
III-V semiconductors; field effect transistors; indium compounds; semiconductor quantum wires; FET devices; InSb; Si; electrical properties; electrochemical deposition technique; nanowire devices; size 30 nm to 200 nm; Contact resistance; Electron mobility; FETs; Lithography; Logic devices; Nanoscale devices; Photonic band gap; Substrates; Temperature; Thermal engineering;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800752
