Title :
Field Emission Property of CNT Field Emitters in the Triode Structure with Anodic Aluminum Oxide Template
Author :
Cheng, Hui-Wen ; Lin, Chen-Chun ; Li, Yiming ; Pan, Fu-Ming
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
Carbon nanotubes (CNT) are grown in anodic aluminum oxide (AAO) and use as field emitters in a triode structure. To fabricate the field-emission triode structure, nanoporous AAO thin layer is first prepared on the Si(100) substrate, followed by the growth of vertically aligned carbon nanotubes in AAO pore channels by electron cyclotron resonance chemical vapor deposition. The SiO2 dielectric and Al gate electrode layers requires for the triode structure are directly deposited on the CNTs. Reactive ion and wet etches are then used to open the field-emission area in the triode. Scanning electron microscopy and Raman spectroscopy studies reveal that damage to CNT emitters in the etched area is trivial. Field emission properties of CNT emitters are then calculated by solving a set of Maxwell equations with FDTD-PIC method. Calibration between the measured current and computed results is performed to validate the theoretical approach. According to our investigation, 10 CNTs in the explored single triode structure show the best current density of the structure.
Keywords :
Raman spectroscopy; aluminium compounds; carbon nanotubes; chemical vapour deposition; cyclotron resonance; field emission; nanotechnology; scanning electron microscopy; silicon compounds; sputter etching; Al; Maxwell equation; Raman spectroscopy; SiO2; carbon nanotube field emitter; chemical vapor deposition; electron cyclotron resonance; field-emission triode structure; nanoporous anodic aluminum oxide; reactive ion etches; scanning electron microscopy; wet etches; Aluminum oxide; Carbon nanotubes; Chemical vapor deposition; Cyclotrons; Dielectric substrates; Electrodes; Electrons; Nanoporous materials; Resonance; Wet etching;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450199