Title :
A capacitive fingerprint sensor with low-temperature poly-Si TFTs
Author :
Hashido, R. ; Suzuki, A. ; Iwata, A. ; Ogawa, T. ; Okamoto, T. ; Satoh, Y. ; Inoue, M.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A capacitive fingerprint sensor using low-temperature poly-Si TFTs succeeds in fingerprint certification. The array area is 19.2×15 mm/sup 2/. Resolution is 423 dpi (60 μm pitch) using a structure with only one transistor and one sensor plate.
Keywords :
arrays; capacitive sensors; field effect integrated circuits; fingerprint identification; silicon; thin film transistors; 1.2 W; 5 V; 500 kHz; Si; capacitive fingerprint sensor; fingerprint certification; low-temperature poly-Si TFTs; pixel transistor; polysilicon TFT; sensor array; sensor plate; soda glass substrate; Capacitive sensors; Costs; Electric potential; Fingerprint recognition; Fingers; Glass; Parasitic capacitance; Sensor arrays; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912625
