Title :
SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design
Author :
Wei-Ming, Yang ; Jian-xin, Chen ; Chen, Shi ; Liu Su-juan
Author_Institution :
Hubei Univ., Wuhan
Abstract :
The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations´ representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.
Keywords :
Ge-Si alloys; SPICE; bipolar transistor circuits; heterojunction bipolar transistors; integrated circuit design; microwave amplifiers; semiconductor device models; HBT; SPICE model; SPICE parameters extraction; SiGe; Teflon substrate PCB; amplifier design; high resistivity substrate; small-signal characterization; two-stage direct-coupled amplifier; Capacitors; Conductivity; Data mining; Doping; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; SPICE; Silicon germanium;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on
Conference_Location :
Builin
Print_ISBN :
1-4244-1049-5
Electronic_ISBN :
1-4244-1049-5
DOI :
10.1109/ICMMT.2007.381427
