Title :
Low voltage performance of a low noise operational amplifier in a 1.2 μm digital CMOS technology
Author :
Holman, W. Timothy ; Connelly, J.Alvin
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A low noise operational amplifier using lateral PNP bipolar transistors has been fabricated in a 1.2 μm digital CMOS process. Total circuit area is 0.211 mm2. The amplifier functions with power supply voltages of ±0.5 V, achieves a GBW product >400 kHz, requires a low quiescent current of 70 μA, and generates En =39 nV/√(Hz) at 10 Hz
Keywords :
CMOS analogue integrated circuits; integrated circuit noise; operational amplifiers; -5 V; 1.2 micron; 5 V; 70 muA; CMOS op amp; LNA; LV opamp; digital CMOS technology; lateral PNP bipolar transistors; low noise operational amplifier; low voltage performance; Bipolar transistors; CMOS process; CMOS technology; Frequency; Integrated circuit noise; Low voltage; Low-noise amplifiers; Operational amplifiers; Power engineering and energy; Power engineering computing;
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
DOI :
10.1109/MWSCAS.1994.519202
