Time domain characteristic model for VLSI interconnects with arbitrary initial potential and current distributions

In this paper, we give an innovative way to generalize the time domain characteristic model of VLSI interconnect without initial distributions to the transient simulation of lossy VLSI interconnects with arbitrary initial potential and current distributions. The method is much more efficient in computational time and computer memory than the existing methods. The transient responses of the lossy transmission lines with steady-state and transient initial distributions are simulated for illustration. The accuracy and efficiency of our method is substantiated by the exact analytical solutions