Title :
Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies
Author :
Chevalier, P. ; Geynet, B. ; Vandelle, B. ; Brossard, F. ; Pourchon, F. ; Avenier, G. ; Gloria, D. ; Dutartre, D. ; Lepilliet, S. ; Dambrine, G. ; Zerounian, N. ; Yau, K.H.K. ; Laskin, E. ; Nicolson, S.T. ; Voinigescu, S.P. ; Chantre, A.
Author_Institution :
Analog & RF Adv. R & D, STMicroelectronics, Crolles
Abstract :
In this paper we review a bit more than 10 years of SiGe BiCMOS technology development and present the best results published to date by the main contenders in the field. Next, with the support of recent results obtained at STMicroelectronics, we discuss the process optimization that led to further increase in the device operating speed. Finally, we present the characteristics of a 260GHz fT, 340GHz fmax SiGe HBT technology along with recent circuit results demonstrated in this technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; HBT technology; Si-SiGe; frequency 260 GHz; frequency 340 GHz; heterojunction bipolar transistors; millimeter-wave BiCMOS technology; process optimization; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Research and development; Silicon germanium; Strontium;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800800
