• DocumentCode
    298408
  • Title

    A small signal model for dual channel high electron mobility transistors

  • Author

    Gupta, Ravi ; El Nokali, M.

  • Author_Institution
    Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    3-5 Aug 1994
  • Firstpage
    678
  • Abstract
    A technique is presented to calculate the total channel charge of a dual channel high electron mobility transistor. The current voltage characteristics and the small signal parameters gm and gD of the device are derived. The effects of parasitic drain and source resistances and channel length modulation are included
  • Keywords
    high electron mobility transistors; semiconductor device models; channel length modulation; current voltage characteristics; dual channel high electron mobility transistors; parasitic drain resistance; parasitic source resistance; small signal model; small signal parameters; total channel charge; Electron mobility; Gallium arsenide; HEMTs; Ionization; MODFETs; Poisson equations; Polynomials; Schottky barriers; Taylor series; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
  • Conference_Location
    Lafayette, LA
  • Print_ISBN
    0-7803-2428-5
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1994.519384
  • Filename
    519384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=298408