• DocumentCode
    2984669
  • Title

    Theoretical Study on Effect of Niobium on TiAl(010) Surface Carburization

  • Author

    Liu, Yanping ; Han, Peide ; Xu, Chunxiang

  • Author_Institution
    Coll. of Mech. Eng., Taiyuan Univ. of Technol., Taiyuan, China
  • fYear
    2010
  • fDate
    25-27 June 2010
  • Firstpage
    2463
  • Lastpage
    2466
  • Abstract
    A hard layer which is rich in niobium and carbon on the surface of TiAl based alloy was formed after plasma Nb alloying followed by plasma carburization. The process parameters of plasma Nb alloying and plasma carburization were modified. This paper investigates diffusion of C atoms on TiAl(010) surface with and without Nb which is transition metal element by using first-principles pseudo potential plane-wave method. By analyzing final energy and forming enthalpy, it is found that the duplex treatment of niobizing and carburization makes the final energy of the surface cell of TiAl(010) enhanced, but it makes forming enthalpy descended, as a result stability of cell improved. After analyzing electron structure it shows that niobizing can weaken the effect of bond of Ti(3d)-Al(3p), which can improve the brittleness. Niobizing also can make the number of electron bonding which locate at thereinafter Fermi level increased, improve the stability of alloy. So this can explain the action of Nb promoting carburization from the view of electron aspectnt.
  • Keywords
    aluminium alloys; niobium; surface hardening; titanium alloys; TiAl; TiAl based alloy; TiAl(010) surface carburization; carbon; electron structure; final energy; forming enthalpy; niobium; plasma Nb alloying; plasma carburization; pseudo potential plane-wave method; transition metal element; Bonding; Carbon; Crystals; Niobium; Surface resistance; Surface treatment; TiAl based alloy; diffusion mechanism; first-principles; niobizing and carburization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Control Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-6880-5
  • Type

    conf

  • DOI
    10.1109/iCECE.2010.609
  • Filename
    5630118