High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers

Author

Chen, Wanjun ; Huang, Wei ; Wong, King Yuen ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon

fYear

2008

fDate

23-25 June 2008

Firstpage

287

Lastpage

288

Abstract

In conclusion, an AlGaN/GaN HEMT-compatible lateral field-effect rectifier is demonstrated by utilizing the threshold-voltage controlling capability of the fluorine plasma treatment technique. The rectifier features low on-resistance, low turn-on voltage, high temperature operation and high reverse breakdown voltage. The rectifier is expected to exhibit fast reverse recovery time because of its unipolar nature. In addition, the rectifiers are fabricated with the same process as the normally-off AlGaN/GaN HEMTs, indicating a robust low-cost approach of realizing GaN-based power integrated circuits.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; rectifiers; wide band gap semiconductors; AlGaN-GaN; HEMT-compatible lateral field-effect rectifier; fast reverse recovery time; fluorine plasma treatment; high electron mobility transistors; high reverse breakdown voltage; power integrated circuit; threshold-voltage controlling capability; Aluminum gallium nitride; Breakdown voltage; Gallium nitride; HEMTs; Low voltage; MODFETs; Plasma temperature; Power integrated circuits; Rectifiers; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800842

Filename

4800842