Title :
Simulation of Nanoscale N-well Guarding
Author :
Yang, C.S. ; Huang, M.Y. ; Chen, C.L.
Author_Institution :
Kun Shan Univ., Tainan
Abstract :
We take advantage of finite-element frequency-domain (FEFD) method to simulate the guarding effects of nanoscale n-well structure by solving time-harmonic wave equation of voltage. The results indicate little guarding effect of voltage and limited isolation of carriers. This suggests that n-well structure is not a good guarding strategy.
Keywords :
finite element analysis; frequency-domain analysis; nanotechnology; wave equations; finite-element frequency-domain method; nanoscale N-well guarding simulation; time-harmonic wave equation; Finite element methods; Frequency dependence; Impurities; Nanostructures; Partial differential equations; Permittivity; Silicon on insulator technology; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450307
