Development of manufacturable CIS processing

Author

Attar, G. ; Muthaiah, A. ; Natarajan, H. ; Nierman, D. ; Karthikeyan, S. ; Zafar, S. ; Ferekides, C.S. ; Morel, D.L.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

182

Abstract

We have developed a manufacturing friendly process for CIS solar cells that includes all-solid-state processing and an inert gas, atmospheric pressure selenization/anneal. Present efficiencies are in the 9-10% range with V_ocs at 400+ mV. Correlations between processing and performance have been established. V_ocs have been advanced to 430 mV using an etching process. These results combined with insights provided by a recombination model indicate that V_ocs in excess of 500 mV are within reach

Keywords

annealing; copper compounds; etching; indium compounds; solar cells; ternary semiconductors; 9 to 10 percent; CuInSe₂; CuInSe₂ solar cells; all-solid-state processing; atmospheric pressure selenization/anneal; etching process; inert gas; manufacturing friendly process; recombination model; Annealing; Atmospheric modeling; Commercialization; Computational Intelligence Society; Etching; Laboratories; Manufacturing processes; Optimized production technology; Photovoltaic cells; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519838

Filename

519838