Title :
Copper phthalocyanine thin-film transistors with polyimide as dielectric
Author :
Zhen, Lijuan ; Shang, Liwei ; Liu, Ming ; Liu, Ge
Author_Institution :
Chinese Acad. of Sci., Beijing
Abstract :
Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using 400 nm polyimide (PI) cured at 250degC as gate dielectric. The root-mean square surface roughness of PI films is 30 Aring. An individual bottom gate, staggered structure was selected to study the device performance. The devices showed p-type electrical characteristics with field-effect mobility, threshold voltage and current on/off ratio values around 1.44 times 10-3 cm2V-1s-1, 1.1 V and 12, respectively.
Keywords :
carrier mobility; curing; dielectric materials; field effect transistors; organic semiconductors; photolithography; polymer films; surface roughness; thin film transistors; TFT fabrication; copper phthalocyanine thin-film transistors; curing; current on-off ratio value; field-effect mobility; p-type electrical characteristics; photolithography; polyimide gate dielectric; root-mean square surface roughness; size 400 nm; temperature 250 C; voltage 1.1 V; Copper; Dielectric devices; Dielectric substrates; Electrodes; Gold; Polyimides; Rough surfaces; Surface contamination; Surface roughness; Thin film transistors; electrical characteristics; polyimide; thin-film transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450314
