Evidence for amorphous like behavior in small grain thin film polycrystalline solar cells

Author

Phillips, J.E. ; Shafarman, W.N. ; Shan, Enze

Author_Institution

Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

303

Abstract

Solar cells based on CdTe, CuInSe₂ or the alloys of Cu(In,Ga)Se₂ have grain sizes on the order of one micron. It has been suggested that materials with these size grains could have an exponential distribution of localized states within the bandgap similar to amorphous materials such as a-Si:H. The current voltage characteristics of a number of CdTe, CuInSe₂ and Cu(In,Ga)Se ₂ based solar cells made by various processes and manufacturers are measured as a function of light intensity and temperature. These measurements are then analyzed and compared for evidence of this amorphous like behavior

Keywords

II-VI semiconductors; cadmium compounds; copper compounds; energy gap; grain size; indium compounds; localised states; semiconductor materials; semiconductor thin films; solar cells; ternary semiconductors; CdTe; Cu(In,Ga)Se₂; Cu(InGa)Se₂; CuInSe₂; amorphous like behavior; bandgap; current voltage characteristics; exponential distribution; light intensity; localized states; small grain thin film polycrystalline solar cells; Amorphous materials; Current measurement; Current-voltage characteristics; Exponential distribution; Grain size; Manufacturing processes; Photonic band gap; Photovoltaic cells; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519868

Filename

519868