Realization of Gate-All-Around (GAA) SOI MOSFET Using Replacement Gate Mask

This paper describes a novel fabrication process of achieving the gate-all-around (GAA) MOSFET device using the replacement gate mask method. In this process, the masking step for the isotropic etch of the bottom gate was replaced by a replacement gate masking step together with a series of processes. The novel technique reduces the process complexity of the GAA SOI MOSFET devices, making it more compatible with the conventional bulk process.