Title :
A Novel Polysilicon Thin-Film Transistor with Multi-Trenched Body for Suppressing Off-State Leakage
Author :
Lin, Jyi-Tsong ; Huang, Kuo-Dong
Abstract :
In this paper, the polysilicon thin-film transistor with multi-trenched body is fabricated and investigated that manifests off-state leakage suppression without degrading on-state current and other electric performances. The reason is that the leakage path can be separated by the multi-trenched body and the carrier scattering through the polysilicon grain-boundary traps can also be minimized. Furthermore, this proposed multi-trenched thin-film transistor can be easily fabricated by trenching and backfilling the buried oxide without destroying the channel film quality. And it is evaluated to reduce more than 50% off-state leakage current compared with the conventional thin-film transistor.
Keywords :
leakage currents; silicon compounds; thin film transistors; electric performances; off-state leakage; polysilicon grain-boundary traps; polysilicon thin-film transistor; Conductivity; Degradation; Fabrication; Flat panel displays; Leakage current; Liquid crystal displays; Scanning electron microscopy; Scattering; Thin film transistors; Wet etching;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450333
