Optimization and characterization of reactively sputtered ZnO

Author

Zafar, S. ; Ferekides, C.S. ; Morel, D.L.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

346

Abstract

Highly uniform films of reactively sputtered ZnO:Al with resistivity of 5×10^-4 Ω-cm and good optical properties have been produced. The resistivity can be reduced to 1-2×10^-4 Ω-cm with some loss in near-IR transmission. Al incorporation drops rapidly with increasing T_ss, while carrier concentration (n) increases resulting in increases in doping efficiency of up to ×30. Transport properties are controlled by bombardment induced damage and ionized impurity scattering. The later results in a correlation between mobility and n which combined with the effect of free carriers on optical properties leads to fundamentals-driven design tradeoffs for solar cell use

Keywords

III-V semiconductors; aluminium; carrier density; carrier mobility; electrical resistivity; impurity scattering; infrared spectra; light transmission; semiconductor doping; semiconductor materials; semiconductor thin films; solar cells; sputter deposition; zinc compounds; 1.2 ohmcm; 5E-4 ohmcm; Al incorporation; ZnO:Al; bombardment induced damage; carrier concentration; carrier mobility; doping efficiency; free carriers; highly uniform films; ionized impurity scattering; near-IR transmission; reactively sputtered films; resistivity; semiconductor; solar cells; Conductivity; Doping; Impurities; Optical design; Optical films; Optical losses; Optical scattering; Photovoltaic cells; Propagation losses; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519972

Filename

519972