Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

Author

Martins, Rodrìgo ; Vieira, Manuela ; Ferreira, Isabel ; Fortunato, Elvira ; Guimarães, L.

Author_Institution

Dept. of Mater. Sci., New Univ. of Lisbon, Portugal

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

508

Abstract

Presents results of the role of the oxygen partial pressure (p₀₂) used on the properties exhibited by doped μc silicon oxycarbide films produced by a two consecutive decomposition and deposition chamber (TCDDC) system, where a spatial separation between the plasma and the growth regions is achieved. The films produced are highly conductive and transparent with suitable properties for optoelectronic applications. The film´s structure, composition, morphology and optoelectronic properties were analysed by means of grazing X-ray diffraction, electron secondary chemical analysis (ESCA), secondary ion mass spectroscopy (SIMS) as a function of temperature (T) and optical absorption (ranging from 300 to 80 K) measurements

Keywords

X-ray diffraction; doping profiles; hopping conduction; light transmission; plasma CVD; plasma CVD coatings; reflectivity; refractive index; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; silicon compounds; spectrochemical analysis; transparency; 300 to 80 K; SIMS; Si₈₀C₁₆O₄:P,B,H; Si₈₉C₇O₄:P,B,H; doped silicon oxycarbide microcrystalline films; growth regions; highly conductive films; morphology; optoelectronic applications; oxygen partial pressure; plasma regions; spatial separation; spatial separation techniques; structure; transparent films; transport properties; two consecutive decomposition and deposition chamber; Chemical analysis; Conductive films; Morphology; Optical films; Plasma applications; Plasma chemistry; Plasma properties; Plasma x-ray sources; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520009

Filename

520009