Reliability of manufacturing 6 inch InGaP HBTs

Author

Cheon, Sanghoon ; Kim, Sung-Su ; Kim, Dae-Hyon ; Park, Jae-Woo

Author_Institution

Knowledge on Inc., Iksan Jeonbook, South Korea

fYear

2002

fDate

20 Oct. 2002

Firstpage

155

Lastpage

159

Abstract

Reliability tests for production level 6 inch InGaP HBTs have been investigated. 6 inch InGaP HBTs have been fabricated and qualified in terms of etching and DC/RF performance uniformity before the reliability test issues. A three temperature accelerated test has been performed to predict MTTF at a certain temperature using the Arrhenius expression. The extrapolated MTTF at a junction temperature 125°C is 1.5×10⁸ hours with an activation energy of 1.98 eV. Furthermore, humidity stress tests were also carried out.

Keywords

III-V semiconductors; etching; failure analysis; gallium compounds; heterojunction bipolar transistors; humidity; indium compounds; life testing; moisture; production testing; semiconductor device manufacture; semiconductor device reliability; semiconductor device testing; 1.5E8 hour; 1.98 eV; 125 C; 6 inch; DC performance; HBT manufacture; InGaP; MTTF prediction; RF performance; accelerated life test; device failure criteria; etching; humidity stress tests; moisture test; production level InGaP HBTs; reliability tests; three temperature accelerated test; Etching; Humidity; Life estimation; Manufacturing; Performance evaluation; Production; Radio frequency; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2002

Print_ISBN

0-7908-0103-5

Type

conf

DOI

10.1109/GAAS.2002.1167933

Filename

1167933