DocumentCode :
2986317
Title :
A 90nm CMOS Direct Conversion Transmitter for WCDMA
Author :
Yang, Xuemin ; Davierwalla, Anosh ; Mann, David ; Gard, Kevin G.
Author_Institution :
North Carolina State Univ., Raleigh
fYear :
2007
fDate :
3-5 June 2007
Firstpage :
17
Lastpage :
20
Abstract :
A linear high output power CMOS direct conversion transmitter for wide band code division multiple access (WCDMA) is presented. Circuit level third order distortion cancellation is applied to driver amplifier to achiever single end output power +9.6 dBm with -43.2 dBc ACLR@5 Mhz and 10% power efficiency at band II. The transmitter is fabricated in 90 nm CMOS technology and die area is 1.1 mm times 1.4 mm. The transmitter consumes 91.4 mW while delivering +9.6 dBm output power. The VDD supply for upconverter is 1.4 V, and the VDD for driver amplifier is 3 V The packaged type is 32 pins 5 mm times 5 mm QFN.
Keywords :
CMOS integrated circuits; amplifiers; broadband networks; code division multiple access; distortion; WCDMA; circuit level third order distortion cancellation; driver amplifier; linear high output power CMOS direct conversion transmitter; size 90 nm; voltage 1.4 V; voltage 3 V; wide band code division multiple access; CMOS technology; Driver circuits; Multiaccess communication; Packaging; Pins; Power amplifiers; Power generation; Power supplies; Transmitters; Wideband; CMOS; WCDMA; direct conversion; linearity; power efficiency; third order distortion cancellation; transmitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
ISSN :
1529-2517
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2007.380823
Filename :
4266371
Link To Document :
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