Charged and neutral defects in light-soaked a-Si:H

Author

Kumeda, Minoru ; Zhou, Jiang-Huai ; Shimizu, Tatsuo

Author_Institution

Fac. of Technol., Kanazawa Univ., Japan

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

634

Abstract

The defect density measured by electron spin resonance (ESR) is increased by 50 times by light soaking, while that measured by the constant photocurrent method (CPM) is increased by only 4 times in n-doped a-Si:H. This large discrepancy between the CPM and ESR results is attributed to the presence of charged defects which are detected by the CPM but not by ESR. Light-induced ESR is thought to be able to detect the charged defects, but quantitative analysis is difficult because whether an increase or decrease of the neutral defect density is observed under illumination depends on the ratio of charged and neutral defect densities, light intensity and the cross-section for charge trapping

Keywords

Staebler-Wronski effect; amorphous semiconductors; dangling bonds; defect states; elemental semiconductors; hydrogen; paramagnetic resonance; photoconductivity; silicon; Si:H; a-Si:H; amorphous semiconductor; charge trapping; charged defects; constant photocurrent method; cross-section; defect density; electron spin resonance; illumination; light intensity; light soaking; neutral defects; photovoltaics; quantitative analysis; Annealing; Density measurement; Electrons; Lamps; Optical filters; Paramagnetic resonance; Photoconductivity; Photovoltaic cells; Stability; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520041

Filename

520041