DocumentCode :
2986398
Title :
Observations on model based predictions for memristor power dissipation
Author :
Gazabare, Swetha ; Pieper, Ron J. ; Wondmagegn, Wudyalew ; Satyala, Nikhil
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Tyler, Tyler, TX, USA
fYear :
2011
fDate :
17-20 March 2011
Firstpage :
450
Lastpage :
454
Abstract :
Comparison is made between memristor linear, nonlinear drift models with Hewlett Packard (HP) experimental data using MATLAB mathematical model analysis. Average power predictions indicated that the experiment with 0.58mW and linear model with 0.86mW showed better agreement in comparison to nonlinear model with 1.17mW. Instantaneous power profile comparisons between both linear and nonlinear models with experimental data indicate that further modeling efforts are needed to capture details in instantaneous power profile for experimental data. Average power model-based predictions are nominally on the same order as the physical device.
Keywords :
memristors; power aware computing; average power predictions; instantaneous power profile; linear drift model; memristor power dissipation; nonlinear drift model; power 0.58 mW; power 0.86 mW; Data models; Integrated circuit modeling; Mathematical model; Memristors; Predictive models; Resistance; Time frequency analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southeastcon, 2011 Proceedings of IEEE
Conference_Location :
Nashville, TN
ISSN :
1091-0050
Print_ISBN :
978-1-61284-739-9
Type :
conf
DOI :
10.1109/SECON.2011.5752984
Filename :
5752984
Link To Document :
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